G1K3N10G Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 7+ | 2.55 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.42 EUR |
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Technische Details G1K3N10G Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 5A, Power dissipation: 1.6W, Case: SOT89, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 19nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G1K3N10G
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G1K3N10G | Hersteller : Goford Semiconductor |
Description: N100V, 5A,RD<130M@10V,VTH1V~2V, Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V |
Produkt ist nicht verfügbar |
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| G1K3N10G | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 1.6W Case: SOT89 Gate-source voltage: ±20V Mounting: SMD Gate charge: 19nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |