G1NP02LLE

G1NP02LLE Goford Semiconductor


GOFORD-G1NP02LLE.pdf Hersteller: Goford Semiconductor
Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 150000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
15000+0.068 EUR
30000+0.061 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G1NP02LLE Goford Semiconductor

Description: MOSFET 20V 1.3A/1.1A SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V, Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active.

Weitere Produktangebote G1NP02LLE nach Preis ab 0.11 EUR bis 0.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G1NP02LLE G1NP02LLE Hersteller : Goford Semiconductor GOFORD-G1NP02LLE.pdf Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE Hersteller : Goford Semiconductor GOFORD-G1NP02LLE.pdf Description: MOSFET 20V 1.3A/1.1A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
43+0.42 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH