G1NP02LLE Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 46+ | 0.46 EUR |
| 63+ | 0.33 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
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Technische Details G1NP02LLE Goford Semiconductor
Description: MOSFET 20V 1.3A SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V, Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active.
Weitere Produktangebote G1NP02LLE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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G1NP02LLE | Goford Semiconductor |
Description: MOSFET 20V 1.3A SOT23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| G1NP02LLE | GOFORD SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 1.3/-1.1A; ESD Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1.3/-1.1A Power dissipation: 1.25/1.25W Gate-source voltage: ±10V Mounting: SMD Gate charge: 1/1.22nC Kind of channel: enhancement Case: SOT23-6 Technology: Trench Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G1NP02LLE |
|
Hersteller: Goford Semiconductor
Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G1NP02LLE |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 1.3/-1.1A; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.3/-1.1A
Power dissipation: 1.25/1.25W
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 1/1.22nC
Kind of channel: enhancement
Case: SOT23-6
Technology: Trench
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 1.3/-1.1A; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.3/-1.1A
Power dissipation: 1.25/1.25W
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 1/1.22nC
Kind of channel: enhancement
Case: SOT23-6
Technology: Trench
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH