G2003A Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
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Technische Details G2003A Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23, Case: SOT23, Mounting: SMD, Technology: Trench, Kind of channel: enhancement, Type of transistor: N-MOSFET, Gate charge: 12nC, Power dissipation: 1.8W, Drain current: 3A, Gate-source voltage: ±20V, Drain-source voltage: 190V, Polarisation: unipolar.
Weitere Produktangebote G2003A
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G2003A | Hersteller : Goford Semiconductor |
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3. Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 190 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| G2003A | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23 Case: SOT23 Mounting: SMD Technology: Trench Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 12nC Power dissipation: 1.8W Drain current: 3A Gate-source voltage: ±20V Drain-source voltage: 190V Polarisation: unipolar |
Produkt ist nicht verfügbar |