G2003A Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
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Technische Details G2003A Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 190V, Drain current: 3A, Power dissipation: 1.8W, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 12nC, Kind of channel: enhancement.
Weitere Produktangebote G2003A nach Preis ab 0.089 EUR bis 0.11 EUR
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| G2003A | Hersteller : GOFORD Semiconductor |
N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L |
auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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G2003A | Hersteller : Goford Semiconductor |
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3. Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 190 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V |
Produkt ist nicht verfügbar |
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| G2003A | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 190V Drain current: 3A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 12nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |