G2012 Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V

auf Bestellung 3000 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
3000+	0.14 EUR

Mindestbestellmenge: 3000

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Technische Details G2012 Goford Semiconductor

Weitere Produktangebote G2012 nach Preis ab 0.18 EUR bis 0.72 EUR

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	G2012	Hersteller : Heyco	Bumpers / Feet RGB 187-375-4 BLK .375X.125	auf Bestellung 5488 Stücke: Lieferzeit 14-28 Tag (e)	Anzahl Preis ohne MwSt 116+ 0.45 EUR 142+  0.37 EUR 184+  0.28 EUR 500+  0.24 EUR 1000+  0.21 EUR 2000+  0.18 EUR Mindestbestellmenge: 116 kaufen
	G2012	Hersteller : Goford Semiconductor	Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18 Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V	auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e)	Anzahl Preis ohne MwSt 25+ 0.72 EUR 100+  0.58 EUR 500+  0.46 EUR 1000+  0.35 EUR Mindestbestellmenge: 25 kaufen
	G2012	Hersteller : Goford Semiconductor	Description: N20V,RD(MAX)<12M@4.5V,RD(MAX)<18 Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 4.5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V	Produkt ist nicht verfügbar	kaufen