G2014 Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V

auf Bestellung 9000 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
3000+	0.17 EUR

Mindestbestellmenge: 3000

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Technische Details G2014 Goford Semiconductor

Weitere Produktangebote G2014 nach Preis ab 0.14 EUR bis 0.77 EUR

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
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	G2014	Hersteller : Goford Semiconductor	Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V	auf Bestellung 11960 Stücke: Lieferzeit 10-14 Tag (e)	Anzahl Preis ohne MwSt 23+ 0.77 EUR 100+  0.62 EUR 500+  0.49 EUR 1000+  0.38 EUR Mindestbestellmenge: 23 kaufen
	G2014	Hersteller : GOFORD Semiconductor	N-Channel Enhancement Mode Power MOSFET	auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e)	Anzahl Preis ohne MwSt 3000+ 0.15 EUR Mindestbestellmenge: 3000 kaufen
	G2014	Hersteller : Goford Semiconductor	Description: N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 5A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V	Produkt ist nicht verfügbar	kaufen