G20N06D52 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET 2N-CH 60V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.32 EUR |
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Technische Details G20N06D52 Goford Semiconductor
Description: MOSFET 2N-CH 60V 20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75).
Weitere Produktangebote G20N06D52 nach Preis ab 0.26 EUR bis 0.3 EUR
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| G20N06D52 | Hersteller : GOFORD Semiconductor |
Dual N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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