G20N06D52 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET 2N-CH 60V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-DFN (4.9x5.75)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PowerTDFN
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.33 EUR |
| 15000+ | 0.31 EUR |
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Technische Details G20N06D52 Goford Semiconductor
Description: MOSFET 2N-CH 60V 20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-DFN (4.9x5.75), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PowerTDFN, Part Status: Active.
Weitere Produktangebote G20N06D52 nach Preis ab 0.28 EUR bis 1.11 EUR
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G20N06D52 | Hersteller : Goford Semiconductor |
Description: MOSFET 2N-CH 60V 20A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-DFN (4.9x5.75) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerTDFN Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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G20N06D52 | Hersteller : Goford Semiconductor |
Description: MOSFET 2N-CH 60V 20A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-DFN (4.9x5.75) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerTDFN Part Status: Active |
auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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| G20N06D52 | Hersteller : GOFORD Semiconductor |
Dual N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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