G220P02D2 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details G220P02D2 Goford Semiconductor
P-CH,-20V,-8A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -0.5V to -1.2V, DFN2X2-6L.
Weitere Produktangebote G220P02D2 nach Preis ab 0.12 EUR bis 0.65 EUR
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G220P02D2 | Hersteller : Goford Semiconductor |
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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G220P02D2 | Hersteller : Goford Semiconductor |
Description: P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 3.5W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G220P02D2 | Hersteller : GOFORD Semiconductor |
P-CH,-20V,-8A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -0.5V to -1.2V, DFN2X2-6L |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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