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G220P03S2

G220P03S2 Goford Semiconductor

GOFORD-G220P03S2.pdf Hersteller: Goford Semiconductor
Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
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100+ 0.59 EUR
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Technische Details G220P03S2 Goford Semiconductor

Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP.

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G220P03S2 G220P03S2 Hersteller : Goford Semiconductor GOFORD-G220P03S2.pdf Description: MOSFET P+P-CH 30V 9A SOP-8L DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
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