
G2305 Goford Semiconductor

Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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3000+ | 0.12 EUR |
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Technische Details G2305 Goford Semiconductor
P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23.
Weitere Produktangebote G2305 nach Preis ab 0.04 EUR bis 0.62 EUR
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G2305 | Hersteller : Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V |
auf Bestellung 5918 Stücke: Lieferzeit 10-14 Tag (e) |
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G2305 | Hersteller : GOFORD Semiconductor |
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auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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G2305 | Hersteller : GMT |
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auf Bestellung 4180 Stücke: Lieferzeit 21-28 Tag (e) |