G230P06F Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 42A TO-220F
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 67.57W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details G230P06F Goford Semiconductor
Description: MOSFET P-CH 60V 42A TO-220F, Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 67.57W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote G230P06F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| G230P06F | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -42A; 67.57W; TO220F Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -60V Drain current: -42A Power dissipation: 67.57W Case: TO220F Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 62nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G230P06F |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -42A; 67.57W; TO220F
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -42A
Power dissipation: 67.57W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -42A; 67.57W; TO220F
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -42A
Power dissipation: 67.57W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH