G2312 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 46+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
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Technische Details G2312 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5A, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 10.5nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 1.25W.
Weitere Produktangebote G2312 nach Preis ab 0.074 EUR bis 1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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G2312 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Gate charge: 10.5nC Kind of channel: enhancement Technology: Trench Power dissipation: 1.25W |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G2312 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 119+ | 0.71 EUR |
| 221+ | 0.38 EUR |
| 512+ | 0.17 EUR |
| 849+ | 0.1 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.074 EUR |