G2312 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
auf Bestellung 1117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 46+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
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Technische Details G2312 Goford Semiconductor
Mounting Fixings RGBA 19-39-50 BLACK.
Weitere Produktangebote G2312
| Foto | Bezeichnung | Hersteller | Beschreibung |
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G2312 | Hersteller : Goford Semiconductor |
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V |
Produkt ist nicht verfügbar |
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G2312 | Hersteller : Heyco |
Mounting Fixings RGBA 19-39-50 BLACK |
Produkt ist nicht verfügbar |