G2312 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 53+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.18 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
33 Stücke
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Produktbewertung abgeben
Technische Details G2312 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 5A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 10.5nC, Technology: Trench.
Weitere Produktangebote G2312
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
G2312 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Kind of channel: enhancement Gate charge: 10.5nC Technology: Trench |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| G2312 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Technology: Trench
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
Technology: Trench
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)