G250N03D2E Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 0.25 EUR |
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Technische Details G250N03D2E Goford Semiconductor
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DFN (2x2).
Weitere Produktangebote G250N03D2E
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G250N03D2E | Hersteller : Goford Semiconductor |
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DFN (2x2) |
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