G29 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P-CH 15V 4.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.08 EUR |
| 15000+ | 0.073 EUR |
| 30000+ | 0.065 EUR |
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Technische Details G29 Goford Semiconductor
Description: MOSFET P-CH 15V 4.1A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 1.05W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V.
Weitere Produktangebote G29 nach Preis ab 0.11 EUR bis 0.7 EUR
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G29 | Hersteller : Goford Semiconductor |
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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G29 | Hersteller : Goford Semiconductor |
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V FET Feature: Standard Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 10 V |
auf Bestellung 12764 Stücke: Lieferzeit 10-14 Tag (e) |
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