G29 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G29 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -15V, Drain current: -4.1A, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 7.8nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 1.05W.
Weitere Produktangebote G29 nach Preis ab 0.08 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
G29 | Goford Semiconductor |
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V Power Dissipation (Max): 1.05W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V |
auf Bestellung 3293 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
G29 | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -15V Drain current: -4.1A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Technology: Trench Power dissipation: 1.05W |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| G29 | GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G29 |
|
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 3293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 44+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| G29 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.1A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.05W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.1A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.05W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 152+ | 0.56 EUR |
| 250+ | 0.35 EUR |
| 477+ | 0.18 EUR |
| 688+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.093 EUR |
| G29 |
|
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.08 EUR |