G2K2P10S2E Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: P-100V,ESD,-3.5A,RD(MAX)<200M@-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active

auf Bestellung 4000 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
4000+	0.54 EUR

Mindestbestellmenge: 4000

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Technische Details G2K2P10S2E Goford Semiconductor

Weitere Produktangebote G2K2P10S2E nach Preis ab 0.54 EUR bis 1.39 EUR

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	G2K2P10S2E	Hersteller : Goford Semiconductor	Description: P-100V,ESD,-3.5A,RD(MAX)<200M@-1 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active	auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e)	Anzahl Preis ohne MwSt 13+ 1.39 EUR 15+  1.22 EUR 100+  0.94 EUR 500+  0.74 EUR 1000+  0.59 EUR 2000+  0.54 EUR Mindestbestellmenge: 13 kaufen