G2K8P15S

G2K8P15S Goford Semiconductor


GOFORD-G2K8P15S.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 2.2A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
FET Feature: Standard
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 28000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.39 EUR
16000+ 0.36 EUR
Mindestbestellmenge: 4000
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Technische Details G2K8P15S Goford Semiconductor

Description: MOSFET P-CH 150V 2.2A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Supplier Device Package: 8-SOP, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V, FET Feature: Standard, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.