G2SB60-E3/51 Vishay General Semiconductor
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.67 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.06 EUR |
| 400+ | 0.90 EUR |
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Technische Details G2SB60-E3/51 Vishay General Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL, Packaging: Bulk, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Part Status: Obsolete, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 1.5 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote G2SB60-E3/51
| Foto | Bezeichnung | Hersteller | Beschreibung |
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G2SB60-E3/51 | Hersteller : Vishay |
 Rectifier Bridge Diode Single 600V 1.5A 4-Pin Case GBL Bulk |
Produkt ist nicht verfügbar |
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G2SB60-E3/51 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |