G300P06S Goford Semiconductor

Hersteller: Goford Semiconductor
Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP