G3035 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details G3035 Goford Semiconductor
P-CH -30V -4.6A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23.
Weitere Produktangebote G3035 nach Preis ab 0.042 EUR bis 0.56 EUR
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G3035 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V |
auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3035 | Hersteller : GOFORD Semiconductor |
P-CH -30V -4.6A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23 |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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