G3035 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 4.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.059 EUR |
| 15000+ | 0.055 EUR |
| 30000+ | 0.05 EUR |
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Technische Details G3035 Goford Semiconductor
Description: MOSFET P-CH 30V 4.6A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 4A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G3035 nach Preis ab 0.044 EUR bis 0.55 EUR
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G3035 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V |
auf Bestellung 4619 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3035 | Hersteller : GOFORD Semiconductor |
P-CH -30V -4.6A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23 |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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G3035 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V |
Produkt ist nicht verfügbar
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| G3035 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.6A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Gate charge: 13nC Power dissipation: 1.4W Gate-source voltage: ±20V Case: SOT23 |
Produkt ist nicht verfügbar
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