Produkte > GOFORD SEMICONDUCTOR > G3035L
G3035L

G3035L Goford Semiconductor

G3035L.pdf
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details G3035L Goford Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -4.1A, Gate charge: 12.5nC, Power dissipation: 1.4W, Gate-source voltage: ±20V, Case: SOT23.

Weitere Produktangebote G3035L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
G3035L G3035L Goford Semiconductor G3035L.pdf Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G3035L GOFORD SEMICONDUCTOR G3035L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Gate charge: 12.5nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3035L G3035L.pdf
G3035L
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G3035L G3035L.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Gate charge: 12.5nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH