G3035L Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
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Technische Details G3035L Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -4.1A, Gate charge: 12.5nC, Power dissipation: 1.4W, Gate-source voltage: ±20V, Case: SOT23.
Weitere Produktangebote G3035L nach Preis ab 0.052 EUR bis 0.067 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G3035L | Hersteller : GOFORD Semiconductor |
P-CH -30V -4.1A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23-3L |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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G3035L | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
Produkt ist nicht verfügbar |
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| G3035L | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Gate charge: 12.5nC Power dissipation: 1.4W Gate-source voltage: ±20V Case: SOT23 |
Produkt ist nicht verfügbar |