G30N02T Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 20V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.33 EUR |
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Technische Details G30N02T Goford Semiconductor
Description: MOSFET N-CH 20V 30A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V.
Weitere Produktangebote G30N02T nach Preis ab 0.32 EUR bis 0.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G30N02T | Hersteller : GOFORD Semiconductor |
N-CH,20V,30A,RD(max) Less Than 13mOhm at 4.5V,VTH 0.5V to 1.2V,TO-220 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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G30N02T | Hersteller : Goford Semiconductor |
Description: N20V,RD(MAX)<13M@4.5V,VTH0.5V~1. Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V FET Feature: Standard Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
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