G30N02T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
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Technische Details G30N02T Goford Semiconductor
Description: MOSFET N-CH 20V 30A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 4.5V, FET Feature: Standard, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V.
Weitere Produktangebote G30N02T nach Preis ab 0.36 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G30N02T | GOFORD Semiconductor |
N-CH,20V,30A,RD(max) Less Than 13mOhm at 4.5V,VTH 0.5V to 1.2V,TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G30N02T |
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Hersteller: GOFORD Semiconductor
N-CH,20V,30A,RD(max) Less Than 13mOhm at 4.5V,VTH 0.5V to 1.2V,TO-220
N-CH,20V,30A,RD(max) Less Than 13mOhm at 4.5V,VTH 0.5V to 1.2V,TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 486+ | 0.36 EUR |