G30N03D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 4855 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.34 EUR |
| 2000+ | 0.3 EUR |
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Technische Details G30N03D3 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 42A; 25W; DFN3x3-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 42A, Power dissipation: 25W, Case: DFN3x3-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 13nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G30N03D3 nach Preis ab 0.14 EUR bis 0.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G30N03D3 | Hersteller : GOFORD Semiconductor |
N-CH 30V 30A 7mOhm/MAX at 10V, 12mOhm/MAX at 5V DFN3x3 |
auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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G30N03D3 | Hersteller : Goford Semiconductor |
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
Produkt ist nicht verfügbar |
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| G30N03D3 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 42A; 25W; DFN3x3-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 25W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |