Produkte > GOFORD SEMICONDUCTOR > G30N04D3
G30N04D3

G30N04D3 Goford Semiconductor

GOFORD-G30N04D3.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 30A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.24 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details G30N04D3 Goford Semiconductor

Description: MOSFET N-CH 40V 30A DFN33-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, FET Feature: Standard, Power Dissipation (Max): 19.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V.

Weitere Produktangebote G30N04D3 nach Preis ab 0.24 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G30N04D3 G30N04D3 Hersteller : Goford Semiconductor GOFORD-G30N04D3.pdf Description: MOSFET N-CH 40V 30A DFN33-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
auf Bestellung 5399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.93 EUR
100+ 0.64 EUR
500+ 0.54 EUR
1000+ 0.46 EUR
2000+ 0.41 EUR
Mindestbestellmenge: 17
G30N04D3 Hersteller : GOFORD Semiconductor GOFORD-G30N04D3.pdf N-CH 40V 30A 9.5mOhmMAX at 4.5V,16mOhmMAX at 4.5V DFN3x3-8L
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.24 EUR
Mindestbestellmenge: 5000
G30N04D3 G30N04D3 Hersteller : Goford Semiconductor GOFORD-G30N04D3.pdf Description: MOSFET N-CH 40V 30A DFN33-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Produkt ist nicht verfügbar