G33N03D3

G33N03D3 Goford Semiconductor


G33N03D3.pdf Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
auf Bestellung 100000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.27 EUR
15000+0.24 EUR
30000+0.22 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G33N03D3 Goford Semiconductor

Description: N30V,RD(MAX).

Weitere Produktangebote G33N03D3 nach Preis ab 0.49 EUR bis 1.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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G33N03D3 G33N03D3 Hersteller : Goford Semiconductor G33N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.49 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G33N03D3 G33N03D3 Hersteller : Goford Semiconductor G33N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
auf Bestellung 107329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
15+1.18 EUR
100+0.82 EUR
500+0.69 EUR
1000+0.58 EUR
2000+0.52 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH