G33N03D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.32 EUR |
| 15000+ | 0.29 EUR |
| 30000+ | 0.26 EUR |
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Technische Details G33N03D3 Goford Semiconductor
Description: N30V,RD(MAX).
Weitere Produktangebote G33N03D3 nach Preis ab 0.58 EUR bis 1.63 EUR
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G33N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 18.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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G33N03D3 | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M Power - Max: 18.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V |
auf Bestellung 107329 Stücke: Lieferzeit 10-14 Tag (e) |
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| G33N03D3 |
|
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.58 EUR |
| G33N03D3 |
|
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Power - Max: 18.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 107329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.62 EUR |