G33N03D52 Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D
Packaging: Tape & Reel (TR)
Package / Case: DFN5*6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN5*6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V

auf Bestellung 5000 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
5000+	0.33 EUR

Mindestbestellmenge: 5000

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Technische Details G33N03D52 Goford Semiconductor

Weitere Produktangebote G33N03D52 nach Preis ab 0.44 EUR bis 1.16 EUR

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	G33N03D52	Hersteller : Goford Semiconductor	Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D Packaging: Cut Tape (CT) Package / Case: DFN5*6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN5*6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V	auf Bestellung 9980 Stücke: Lieferzeit 10-14 Tag (e)	Anzahl Preis ohne MwSt 16+ 1.16 EUR 18+  1 EUR 100+  0.69 EUR 500+  0.58 EUR 1000+  0.49 EUR 2000+  0.44 EUR Mindestbestellmenge: 16 kaufen
	G33N03D52	Hersteller : Goford Semiconductor	Description: N30V, 33A,RD<13M@10V,VTH1V~3V, D Packaging: Tape & Reel (TR) Package / Case: DFN5*6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 16A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN5*6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V	Produkt ist nicht verfügbar	kaufen