G3416 Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.074 EUR |
| 15000+ | 0.068 EUR |
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Technische Details G3416 Goford Semiconductor
Description: MOSFET N-CH ESD 20V 6A SOT-23, Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.3W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote G3416 nach Preis ab 0.069 EUR bis 0.69 EUR
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G3416 | Goford Semiconductor |
 Description: MOSFET N-CH ESD 20V 6A SOT-23Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.3W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V |
auf Bestellung 2833 Stücke: Lieferzeit 10-14 Tag (e) |
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| G3416 | GOFORD Semiconductor |
G3416 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3416 |
|
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 20V 6A SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.3W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Description: MOSFET N-CH ESD 20V 6A SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.3W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
auf Bestellung 2833 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 0.69 EUR |
| 50+ | 0.42 EUR |
| 70+ | 0.3 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| G3416 |
|
Hersteller: GOFORD Semiconductor
G3416
G3416
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |