G3K8N15KE GOFORD SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 150V; 6A; 20W; TO252; ESD, Power dissipation: 20W, Gate charge: 20nC, Polarisation: unipolar, Version: ESD, Technology: Trench, Drain current: 6A, Kind of channel: enhancement, Drain-source voltage: 150V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: TO252, Mounting: SMD.