 
G40P03K Goford Semiconductor
 Hersteller: Goford Semiconductor
                                                Hersteller: Goford SemiconductorDescription: MOSFET P-CH 30V 40A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 2500+ | 0.31 EUR | 
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Technische Details G40P03K Goford Semiconductor
Description: MOSFET P-CH 30V 40A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V. 
Weitere Produktangebote G40P03K nach Preis ab 0.23 EUR bis 1.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
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|   | G40P03K | Hersteller : Goford Semiconductor |  Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V | auf Bestellung 1018 Stücke:Lieferzeit 10-14 Tag (e) | 
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| G40P03K | Hersteller : GOFORD Semiconductor |  P-30V,-40A,RD(max) Less Than 9.5mOhm at -10V,RD(max) Less Than 12.5mOhm at -4.5V,VTH -1.0V to -2.5V ,TO-252 | auf Bestellung 15000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | G40P03K | Hersteller : Goford Semiconductor |  Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V | Produkt ist nicht verfügbar |