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G45P02D3

G45P02D3 Goford Semiconductor

GOFORD-G45P02D3.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 45A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.25 EUR
15000+0.24 EUR
30000+0.23 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G45P02D3 Goford Semiconductor

Description: MOSFET P-CH 20V 45A DFN3*3-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V.

Weitere Produktangebote G45P02D3 nach Preis ab 0.19 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G45P02D3 G45P02D3 Hersteller : Goford Semiconductor GOFORD-G45P02D3.pdf Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.85 EUR
100+0.59 EUR
500+0.49 EUR
1000+0.42 EUR
2000+0.37 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
G45P02D3 Hersteller : GOFORD Semiconductor GOFORD-G45P02D3.pdf G45P02D3
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.23 EUR
15000+0.21 EUR
30000+0.19 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G45P02D3 G45P02D3 Hersteller : Goford Semiconductor GOFORD-G45P02D3.pdf Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 4.5V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4867 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH