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G45P02D3

G45P02D3 Goford Semiconductor

GOFORD-G45P02D3.pdf Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
auf Bestellung 4876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.84 EUR
100+ 0.58 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 18
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Technische Details G45P02D3 Goford Semiconductor

Description: P20V,RD(MAX).

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G45P02D3 G45P02D3 Hersteller : Goford Semiconductor GOFORD-G45P02D3.pdf Description: P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
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