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G4616

G4616 Goford Semiconductor

GOFORD-G4616.pdf Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.25 EUR
16000+ 0.23 EUR
32000+ 0.21 EUR
Mindestbestellmenge: 4000
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Technische Details G4616 Goford Semiconductor

Description: MOSFET N/P-CH 40V 8A/7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Tc), 2.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.

Weitere Produktangebote G4616 nach Preis ab 0.47 EUR bis 0.93 EUR

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Preis ohne MwSt
G4616 G4616 Hersteller : Goford Semiconductor GOFORD-G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.47 EUR
Mindestbestellmenge: 19
G4616 G4616 Hersteller : Goford Semiconductor GOFORD-G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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