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Technische Details G51XT Global Power Technology
Description: DIODE SIC 650V 1.84A SOD123FL, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOD-123FL, Current - Average Rectified (Io): 1.84A, Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Tape & Box (TB).
Weitere Produktangebote G51XT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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G51XT | Global Power Technology-GPT |
 Description: DIODE SIC 650V 1.84A SOD123FLCurrent - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1.84A Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
G51XT | Global Power Technology-GPT |
Description: DIODE SIC 650V 1.84A SOD123FL Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1.84A Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| G51XT |
|
Hersteller: Global Power Technology-GPT
Description: DIODE SIC 650V 1.84A SOD123FL
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1.84A
Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE SIC 650V 1.84A SOD123FL
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1.84A
Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| G51XT |
|
Hersteller: Global Power Technology-GPT
Description: DIODE SIC 650V 1.84A SOD123FL
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1.84A
Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Box (TB)
Description: DIODE SIC 650V 1.84A SOD123FL
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1.84A
Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH