G51XT Global Power Technology

Description: DIODE SIC 650V 1.84A SOD123FL, Packaging: Tape & Box (TB), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.84A, Supplier Device Package: SOD-123FL, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.