G5S12002A Global Power Technology-GPT
Hersteller: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Cut Tape (CT)
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Technische Details G5S12002A Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tape & Box (TB).
Weitere Produktangebote G5S12002A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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G5S12002A | Global Power Technology-GPT |
Description: DIODE SIL CARB 1.2KV 10A TO220AC Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 170pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G5S12002A |
|
Hersteller: Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Box (TB)
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH