G5S12002A Global Power Technology-GPT
Hersteller: Global Power Technology-GPTDescription: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Cut Tape (CT)
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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Technische Details G5S12002A Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tape & Box (TB), Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 170pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
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G5S12002A | Hersteller : Global Power Technology-GPT |
Description: DIODE SIL CARB 1.2KV 10A TO220AC Packaging: Tape & Box (TB) Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |