G60N04D52 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
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Technische Details G60N04D52 Goford Semiconductor
Description: MOSFET 40V 35A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V, Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Part Status: Active.
Weitere Produktangebote G60N04D52 nach Preis ab 0.54 EUR bis 2.56 EUR
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G60N04D52 | Goford Semiconductor |
Description: MOSFET 40V 35A 8DFN Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) |
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| G60N04D52 | GOFORD Semiconductor |
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G60N04D52 |
|
Hersteller: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 13+ | 1.62 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.71 EUR |
| G60N04D52 |
|
Hersteller: GOFORD Semiconductor
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.54 EUR |