G60N06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 13+ | 1.65 EUR |
| 50+ | 1.23 EUR |
| 100+ | 1.09 EUR |
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Technische Details G60N06T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 55A, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Kind of channel: enhancement, Power dissipation: 60W, Gate charge: 39nC, Technology: Trench.
Weitere Produktangebote G60N06T nach Preis ab 0.45 EUR bis 0.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G60N06T | GOFORD Semiconductor |
N-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G60N06T |
|
Hersteller: GOFORD Semiconductor
N-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220
N-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 378+ | 0.45 EUR |