G60N06T GOFORD Semiconductor
Hersteller: GOFORD SemiconductorN-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 378+ | 0.38 EUR |
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Technische Details G60N06T GOFORD Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 55A, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Kind of channel: enhancement, Technology: Trench, Gate charge: 39nC, Power dissipation: 60W.
Weitere Produktangebote G60N06T
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G60N06T | Hersteller : Goford Semiconductor |
Description: N60V, 50A,RD<17M@10V,VTH1.0V~2.0 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 30 V |
Produkt ist nicht verfügbar |
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| G60N06T | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 55A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Technology: Trench Gate charge: 39nC Power dissipation: 60W |
Produkt ist nicht verfügbar |