G60N10T Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N100V,RD(MAX)<25M@10V,RD(MAX)<30
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5986 pF @ 50 V
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.64 EUR |
| 50+ | 1.76 EUR |
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Technische Details G60N10T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; 132W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 60A, Power dissipation: 132W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 0.12µC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G60N10T nach Preis ab 0.64 EUR bis 0.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| G60N10T | Hersteller : GOFORD Semiconductor |
N-CH,100V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 19mOhm at 4.5V,VTH 0.8V to 2.5V, TO-220 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G60N10T | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 60A; 132W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 132W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 0.12µC Kind of channel: enhancement Technology: Trench |
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