G630J Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
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Technische Details G630J Goford Semiconductor
Description: N200V, 9A,RD.
Weitere Produktangebote G630J nach Preis ab 0.78 EUR bis 1.46 EUR
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G630J | Hersteller : Goford Semiconductor |
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3. Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 735 Stücke: Lieferzeit 10-14 Tag (e) |
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