G6N02L Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V
auf Bestellung 3379 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
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Technische Details G6N02L Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V.
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G6N02L | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 20V 6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V |
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