G6N90F Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 900V 6A 69W 3(MAX) T
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 450 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.2 EUR |
| 10+ | 2.04 EUR |
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Technische Details G6N90F Goford Semiconductor
Description: MOSFET N-CH 900V 6A 69W 3(MAX) T, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 450 V.
Weitere Produktangebote G6N90F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| G6N90F | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Planar; unipolar; 900V; 6A; 69W; TO220F Type of transistor: N-MOSFET Technology: Planar Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Power dissipation: 69W Case: TO220F Gate-source voltage: ±30V Mounting: THT Gate charge: 25nC Kind of channel: enhancement |
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