G7K2N20LLE Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N-PH,200V, ESD,2A,RD<0.7@10V,VTH
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 33+ | 0.65 EUR |
| 50+ | 0.48 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
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Technische Details G7K2N20LLE Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 2A; 1.8W; SOT23-6; ESD, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 2A, Power dissipation: 1.8W, Case: SOT23-6, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote G7K2N20LLE nach Preis ab 0.13 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G7K2N20LLE | GOFORD Semiconductor |
N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-23-6L |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G7K2N20LLE |
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Hersteller: GOFORD Semiconductor
N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-23-6L
N200V, ESD,2A,RD Less Than 0.7Ohm at 10V,VTH 1V to 2.5V, SOT-23-6L
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |