G7K2N20LLE Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N-PH,200V, ESD,2A,RD<0.7@10V,VTH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 100 V
auf Bestellung 2733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 45+ | 0.4 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
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Technische Details G7K2N20LLE Goford Semiconductor
Description: N-PH,200V, ESD,2A,RD.
Weitere Produktangebote G7K2N20LLE
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G7K2N20LLE | Hersteller : Goford Semiconductor |
Description: N-PH,200V, ESD,2A,RD<0.7@10V,VTH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 100 V |
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