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G7P03L

G7P03L Goford Semiconductor

G7P03L.pdf
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G7P03L Goford Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -7A; 1.9W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -7A, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 29nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 1.9W.

Weitere Produktangebote G7P03L nach Preis ab 0.13 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
G7P03L G7P03L Goford Semiconductor G7P03L.pdf Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G7P03L G7P03L GOFORD SEMICONDUCTOR G7P03L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -7A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.9W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
77+1.11 EUR
131+0.65 EUR
227+0.38 EUR
371+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.13 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G7P03L GOFORD-G7P03L.pdf P-канальний ПТ, Udss, В = 30, Id = 7 А, Ciss, пФ @ Uds, В = 1500 @ 15, Qg, нКл = 29, Rds = 23 мОм, Ugs(th) = 2,5 В, Р, Вт = 1,9, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5800 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
G7P03L G7P03L.pdf
G7P03L
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G7P03L G7P03L.pdf
G7P03L
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -7A; 1.9W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.9W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
77+1.11 EUR
131+0.65 EUR
227+0.38 EUR
371+0.23 EUR
500+0.18 EUR
1000+0.15 EUR
3000+0.13 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G7P03L GOFORD-G7P03L.pdf
P-канальний ПТ, Udss, В = 30, Id = 7 А, Ciss, пФ @ Uds, В = 1500 @ 15, Qg, нКл = 29, Rds = 23 мОм, Ugs(th) = 2,5 В, Р, Вт = 1,9, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5800 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH