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G800N06H

G800N06H Goford Semiconductor

G800N06H.pdf
Hersteller: Goford Semiconductor
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
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38+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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Technische Details G800N06H Goford Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; 1.2W; SOT223, Type of transistor: N-MOSFET, Mounting: SMD, Case: SOT223, Technology: Trench, Polarisation: unipolar, Gate charge: 6nC, Power dissipation: 1.2W, Drain current: 3A, Drain-source voltage: 60V, Gate-source voltage: ±20V, Kind of channel: enhancement.

Weitere Produktangebote G800N06H

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
G800N06H G800N06H Goford Semiconductor G800N06H.pdf Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G800N06H GOFORD SEMICONDUCTOR G800N06H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; 1.2W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Technology: Trench
Polarisation: unipolar
Gate charge: 6nC
Power dissipation: 1.2W
Drain current: 3A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G800N06H G800N06H.pdf
G800N06H
Hersteller: Goford Semiconductor
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G800N06H G800N06H.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; 1.2W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Technology: Trench
Polarisation: unipolar
Gate charge: 6nC
Power dissipation: 1.2W
Drain current: 3A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH