G800N06H Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 38+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
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Technische Details G800N06H Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; 1.2W; SOT223, Type of transistor: N-MOSFET, Mounting: SMD, Case: SOT223, Technology: Trench, Polarisation: unipolar, Gate charge: 6nC, Power dissipation: 1.2W, Drain current: 3A, Drain-source voltage: 60V, Gate-source voltage: ±20V, Kind of channel: enhancement.
Weitere Produktangebote G800N06H
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G800N06H | Hersteller : Goford Semiconductor |
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V |
Produkt ist nicht verfügbar |
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| G800N06H | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 3A; 1.2W; SOT223 Type of transistor: N-MOSFET Mounting: SMD Case: SOT223 Technology: Trench Polarisation: unipolar Gate charge: 6nC Power dissipation: 1.2W Drain current: 3A Drain-source voltage: 60V Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |