G800N06S2 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 28+ | 0.63 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.25 EUR |
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Technische Details G800N06S2 Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote G800N06S2
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G800N06S2 | Hersteller : Goford Semiconductor |
Description: MOSFET 2N-CH 60V 3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOP |
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