G800N06S2 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.3 EUR |
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Technische Details G800N06S2 Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOP.
Weitere Produktangebote G800N06S2 nach Preis ab 0.19 EUR bis 0.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G800N06S2 | GOFORD Semiconductor |
Dual N60V, 3A,RD Less Than 80mOhm at 10V,VTH 0.7V to 1.2V, SOP-8 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G800N06S2 |
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Hersteller: GOFORD Semiconductor
Dual N60V, 3A,RD Less Than 80mOhm at 10V,VTH 0.7V to 1.2V, SOP-8
Dual N60V, 3A,RD Less Than 80mOhm at 10V,VTH 0.7V to 1.2V, SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.19 EUR |