G86N06K Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.5 EUR |
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Technische Details G86N06K Goford Semiconductor
Description: N60V,RD(MAX).
Weitere Produktangebote G86N06K nach Preis ab 0.83 EUR bis 1.95 EUR
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G86N06K | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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G86N06K | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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