G900P15D5

G900P15D5 Goford Semiconductor


G900P15D5.pdf Hersteller: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
auf Bestellung 1336 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
500+1.32 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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Technische Details G900P15D5 Goford Semiconductor

P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, DFN5x6-8L.

Weitere Produktangebote G900P15D5 nach Preis ab 0.89 EUR bis 0.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G900P15D5 Hersteller : GOFORD Semiconductor G900P15D5.pdf P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, DFN5x6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.89 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G900P15D5 G900P15D5 Hersteller : Goford Semiconductor G900P15D5.pdf Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
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Im Einkaufswagen  Stück im Wert von  UAH