G900P15K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.68 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.62 EUR |
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Technische Details G900P15K Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -150V; -35A; 198W; TO252, Type of transistor: P-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: -150V, Drain current: -35A, Power dissipation: 198W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 27nC, Kind of channel: enhancement.
Weitere Produktangebote G900P15K
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G900P15K | Hersteller : Goford Semiconductor |
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V |
Produkt ist nicht verfügbar |
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| G900P15K | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -150V; -35A; 198W; TO252 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -150V Drain current: -35A Power dissipation: 198W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 27nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |