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G900P15M

G900P15M Goford Semiconductor

G900P15M.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ -10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ -75 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.1 EUR
8000+1.06 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G900P15M Goford Semiconductor

Description: MOSFET P-CH 150V 35A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V, Power Dissipation (Max): 198W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V.

Weitere Produktangebote G900P15M nach Preis ab 0.98 EUR bis 3.87 EUR

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G900P15M G900P15M Hersteller : Goford Semiconductor G900P15M.pdf Description: MOSFET P-CH 150V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.5 EUR
100+1.7 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
G900P15M Hersteller : GOFORD Semiconductor G900P15M.pdf P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-263
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.98 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G900P15M G900P15M Hersteller : Goford Semiconductor G900P15M.pdf Description: MOSFET P-CH 150V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH