G900P15T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 75 V
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 75 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.45 EUR |
10+ | 2.03 EUR |
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Technische Details G900P15T Goford Semiconductor
P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-220.
Weitere Produktangebote G900P15T nach Preis ab 1.02 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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G900P15T | Hersteller : GOFORD Semiconductor | P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-220 |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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