G9435S Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
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Technische Details G9435S Goford Semiconductor
Description: P-30V,-5.1A,RD(MAX).
Weitere Produktangebote G9435S
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G9435S | Hersteller : Goford Semiconductor |
Description: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
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