GA10JT12-247 GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDescription: TRANS SJT 1200V 10A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V
Current Drain (Id) - Max: 25 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 170 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV
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Technische Details GA10JT12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 10A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V, Current Drain (Id) - Max: 25 A, Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.2 kV, Power - Max: 170 W, Resistance - RDS(On): 100 mOhms, Current - Drain (Idss) @ Vds (Vgs=0): 100 nA @ 1.2 kV.