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GA1L4M-T2-A Renesas Electronics Corporation

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Hersteller: Renesas Electronics Corporation
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 95 @ 50mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk

auf Bestellung 137415 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
2664+	0.18 EUR

Mindestbestellmenge: 2664

Im Einkaufswagen Stück im Wert von UAH

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Technische Details GA1L4M-T2-A Renesas Electronics Corporation

Description: TRANS PREBIAS NPN 50V 0.1A SC70, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70, DC Current Gain (hFE) (Min) @ Ic, Vce: 95 @ 50mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.