| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.23 EUR |
| 10+ | 19.12 EUR |
| 100+ | 15.93 EUR |
| 1000+ | 13.53 EUR |
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Technische Details GAN039-650NBBHP Nexperia
Description: 650 V, 33 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V.
Weitere Produktangebote GAN039-650NBBHP nach Preis ab 16.23 EUR bis 27.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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GAN039-650NBBHP | Nexperia USA Inc. |
 Description: 650 V, 33 MOHM GALLIUM NITRIDE (Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GAN039-650NBBHP |
|
Hersteller: Nexperia USA Inc.
Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V
Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.75 EUR |
| 10+ | 19.48 EUR |
| 100+ | 16.23 EUR |