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GAN039-650NBBHP

GAN039-650NBBHP Nexperia

Hersteller: Nexperia
GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.92 EUR
10+20.68 EUR
100+17.46 EUR
250+17.34 EUR
500+16.49 EUR
1000+15.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GAN039-650NBBHP Nexperia

Description: 650 V, 33 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.

Weitere Produktangebote GAN039-650NBBHP nach Preis ab 20.29 EUR bis 32.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GAN039-650NBBHP GAN039-650NBBHP Hersteller : Nexperia USA Inc. Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.21 EUR
10+27.62 EUR
100+23.01 EUR
500+20.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GAN039-650NBBHP GAN039-650NBBHP Hersteller : Nexperia gan039-650nbb.pdf Trans MOSFET N-CH GaN 650V 60A 12-Pin CCPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GAN039-650NBBHP GAN039-650NBBHP Hersteller : Nexperia gan039-650nbb.pdf Trans MOSFET N-CH GaN 650V 60A 12-Pin CCPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GAN039-650NBBHP GAN039-650NBBHP Hersteller : Nexperia USA Inc. Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Tape & Reel (TR)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH